Semiconductor Diode Calculator

Use the Shockley equation to find the current through a diode, the voltage it needs, and its small signal resistance.

Technology and NetUpdated 2026-10-214 min read
Semiconductor Diode Calculator
Often 1e-13 A for a small silicon signal diode and 1e-9 A for a rectifier.
Forward current at that voltage
...
Thermal voltage...
Voltage for the target current...
Small signal resistance at the target current...

What it does

A diode passes current one way and blocks it the other, and the reason is a junction where electrons and holes meet. The behaviour of that junction is described by one equation, the Shockley diode equation, and every current, voltage drop and resistance figure on a diode data sheet comes out of it.

The equation says the current is the saturation current times an exponential of the voltage across the junction divided by the thermal voltage, and the thermal voltage is the Boltzmann constant times the temperature over the charge on the electron. The NIST page on single diode models for solar cells writes it out in exactly that form and adds that the ideality factor, which is usually between 1 and 2 for a single junction, accounts for recombination in the depletion region.

The exponent is what makes the device interesting. At room temperature the thermal voltage is about 26 mV, so a change of 60 mV in the forward bias multiplies the current by roughly ten. That is why a diode is described by a voltage drop rather than by a resistance, and why a series resistor has to be calculated rather than guessed.

This page solves the equation in both directions. Give it the saturation current, the ideality factor, the junction temperature and a voltage, and it returns the current, the thermal voltage, the voltage needed to reach a target current, and the small signal resistance at that current. The last of those is the slope of the curve, and it is what sets the impedance a diode presents to a small signal.

The model is the ideal one. A real diode has a series resistance that takes over at high current, a leakage current that rises faster than the saturation current as the junction warms, and a reverse breakdown that the equation knows nothing about. It also says nothing about the forward voltage at very low currents, where the exponential term is no longer larger than one.

How to use

  1. Choose the scale for the junction temperature, Celsius or Fahrenheit.
  2. Enter the reverse saturation current from the data sheet. A common value for a small silicon signal diode is 1e-13 A.
  3. Enter the ideality factor, which is 1 for a diffusion limited diode and closer to 2 when recombination matters.
  4. Enter the junction temperature, which is usually well above the ambient temperature in a power circuit.
  5. Read the current at the voltage you entered, and the thermal voltage that sets the steepness of the curve.
  6. Set the target current you care about to get the voltage it needs and the small signal resistance there.

Formula

Shockley diode equation: I = Is x (e raised to the power of V / (n Vt) minus 1). Thermal voltage: Vt = k T / q, with k the Boltzmann constant, q the elementary charge and T the absolute temperature. Voltage for a target current: V = n Vt x ln(I / Is + 1). Small signal resistance: r d = n Vt / I.
I
Current through the diode in amperes.
Is
Reverse saturation current in amperes.
V
Voltage across the junction in volts.
Vt
Thermal voltage, k T over q, in volts.
n
Ideality factor, usually between 1 and 2.

The logarithm in the reverse calculation is the natural one, and the plus one in the bracket matters only at very small currents where the current is close to the saturation current. The thermal voltage is 25.852 mV at 300 K, so the current multiplies by about ten for every 60 mV of extra forward bias. The equation is a steady state relation and says nothing about switching speed or reverse recovery time.

Worked example

Example: a silicon diode at 0.65 V and 300 K

Defaults: Celsius, a saturation current of 1e-13 A, an ideality factor of 1, a junction temperature of 26.85 degrees C, 0.65 V across the junction and a target current of 10 mA.

  1. The absolute temperature is 26.85 + 273.15 = 300 K.
  2. The thermal voltage is Vt = k T / q = 1.380649e-23 x 300 / 1.602176634e-19 = 0.025852 V.
  3. The exponent is 0.65 / (1 x 0.025852) = 25.1437.
  4. The current is 1e-13 x (e raised to 25.1437 minus 1) = 8.3084e-3 A, so 8.3084 mA.
  5. For 10 mA the voltage is 1 x 0.025852 x ln(0.01 / 1e-13 + 1) = 0.6548 V.
  6. The small signal resistance there is 1 x 0.025852 / 0.01 = 2.585 ohm.
  7. The tool shows 8.3084 mA, 25.852 mV, 0.6548 V and 2.585 ohm.

Reference table

Forward current of a silicon diode with a saturation current of 1e-13 A and an ideality factor of 1 at 300 K
Forward voltageCurrentCurrent in mA
0.50 V25.1 uA0.0251
0.55 V173.6 uA0.1736
0.60 V1.2010 mA1.2010
0.65 V8.3084 mA8.3084
0.70 V57.4755 mA57.4755
0.75 V397.5992 mA397.5992

Limits

  • The equation covers the forward and reverse bias behaviour but not reverse breakdown, where the current runs away and the diode is destroyed.
  • Series resistance is ignored, so the prediction is wrong at high current, which is exactly where a real diode needs a current limit.
  • The saturation current is treated as fixed, while in a real device it roughly doubles for every 10 degrees C of temperature rise.
  • There is no leakage, capacitance or switching time in the model, so it cannot predict anything about a circuit in a transient.

Common mistakes

  • Using the ambient temperature instead of the junction temperature. A diode that has warmed up conducts noticeably more.
  • Forgetting the ideality factor, which shifts the curve by a factor of n in the exponent and is the difference between 0.6 V and 0.7 V of drop.
  • Treating a diode like a resistor with a fixed drop. The drop is a consequence of the exponential, and it moves with current and temperature.
  • Leaving out the minus one inside the bracket. It is what makes the current zero at zero volts.
  • Expecting the small signal resistance to stay constant. It falls as the current rises, because the curve gets steeper.

Try it yourself

Quick checks. Answers sit tucked under each question.

What current does a silicon diode with a saturation current of 1e-13 A carry at 0.65 V and 300 K?

8.3084 mA. The thermal voltage is 25.852 mV, so the exponent is 0.65 / 0.025852 = 25.1437 and the current is 1e-13 x (e raised to 25.1437 minus 1).

What voltage does that diode need to carry 10 mA?

0.6548 V, from 1 x 0.025852 x ln(0.01 / 1e-13 + 1). That is the familiar silicon drop of about 0.65 V.

How much does the current change between 0.60 V and 0.65 V?

It rises from 1.2010 mA to 8.3084 mA, nearly seven times larger, because the current is exponential in the voltage.

Questions

What is the Shockley diode equation?

The relation between the current and the voltage across a p-n junction: I equals Is times the exponential of V over n Vt, minus one, with the thermal voltage Vt set by the absolute temperature.

What is the thermal voltage?

The Boltzmann constant times the absolute temperature over the charge on the electron, which gives 25.852 mV at 300 K. It is the scale over which the current changes by a factor of ten.

Why does a silicon diode drop about 0.7 V?

Because the exponential rises to a current of a few milliamps once the forward bias reaches roughly 0.65 V for a typical signal diode. Germanium diodes drop about 0.3 V because the saturation current is far higher.

What does the ideality factor do?

It scales the exponent and so shifts the whole curve. A value of 1 means the current is set by diffusion across the junction, and a value near 2 means recombination in the depletion region is also carrying current.

How does temperature affect a diode?

The thermal voltage rises with temperature, and the saturation current grows faster still, so a diode conducts more at the same voltage when it is hot. That is why a series resistor has to be sized for the hot case.

What is the small signal resistance of a diode?

The resistance of the junction to a small change, which is n Vt divided by the current. For the worked example at 10 mA it is 2.585 ohm.

Sources

How this page was checked. The formula above was matched against the cited sources, and the worked example was run through the tool on this page before publishing. If you spot an error, contact us so we can fix it and note the correction.